Neo Semiconductor launches 3D X

US-based 3D NAND flash producer Neo Semiconductor is launching its 3D X-DRAM memory chips that are said to be the world's first 3D NAND-like DRAM with greatly increased capacities over the current 2D DRAM solutions. The first iteration of the 3D X-DRAM technology can achieve 128 Gb density with 230 layers per chip, 8x higher than current 2D DRAM chips. Neo Semiconductor believes this solution can scale easier and is less expensive to implement compared to other 3D DRAM alternatives, making it a solid candidate to replace 2D DRAM in the near future.

The advantage of the 3D X-DRAM technology lies in the use of the innovative Floating Body Cell (FBC) design that stores data as electric charges using one transistor and zero capacitors. Unlike other 3D DRAM alternatives that try to come up with more complicated new designs, 3D X-DRAM leverages today's mature 3D NAND processes, thus only requiring one mask to define the bit line holes and form the cell structure inside the holes. This approach can greatly simplify the production, implementation and transition from 2D DRAM.

Neo Semiconductor already published all relevant patent applications with the USPAP on April 6 this year. The company is determined to make an industry push for the 3D X-DRAM as a necessary solution for the increasing high-performance and high-capacity memory demand brought on by the rapid advancements in AI. Based on Neo Semiconductor estimates, the memory capacity could be doubled to 256 Gb by 2025, while 1 Tb capacities could be offered in a decade. More information will be released at the Flash Memory Summit on August 9, 2023.

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Neo Semiconductor

via DigiTimes

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